microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. MDS500L 500 watts, 50 volts, pulsed avionics 1030 - 1090 mhz general description the MDS500L is a high power common base bipolar transistor. it is designed for mode-s elm systems in the 1030 - 1090 mhz frequency band. the transistor includes input and output prematch for broadband performance. the device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest mttf. case outline 55st style 1 absolute maximum ratings maximum power dissipation device dissipation @25 c 1 833 w maximum voltage and current collector to emitter voltage (bv ces ) 70 v emitter to base voltage (bv ebo ) 3.5 v peak collector current (i c ) 24 a maximum temperatures storage temperature -65 to +150 c operating junction temperature +200 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power out 500 w p in power input 60 w p g power gain 9.2 db c collector efficiency f = 1030, 1090 mhz vcc = 50 volts pw = note 2 df = note 2 50 % vswr load mismatch tolerance 2:1 pd 1 pulse droop 0.8 db trise 1 rise time 100 nsec functional characteristics @ 25 c bv ebo emitter to base breakdown ie = 15 ma 3.0 v bv ces collector to emitter breakdown ic = 50 ma 70 v bv cbo collector to base breakdown ic = 50 ma 70 v ices collector to emitter leakage vce = 50v 15 ma h fe dc ? current gain vce = 5v, ic = 1.0 a 20 jc 1 thermal resistance 0.08 c/w note 1: at rated output power and pulse conditions note 2: elm burst: 32sec on/ 18sec off x 48, repeated at 23msec rev c ? march 2008
microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. MDS500L sample rf data (sn#7-23; wo#51157x) pout vs pin (elm pulse mod; wo#51157x) 40 140 240 340 440 540 0 102030405060708090 pin(w) pout(w) 1030mhz 1090mhz gain vs pin (elm pulse m od; wo#51157x) 6.50 7.50 8.50 9.50 10.50 0 102030405060708090 pin(w) gain(db) 1030mhz 1090mhz effic vs pin (elm pulse m od; wo#51157x) 20.0 30.0 40.0 50.0 60.0 70.0 0 102030405060708090 pin(w) effic(%) 1030mhz 1090mhz
microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. impedance data frequency z source (ohms) z load (ohms) 1030 1.90 ? j1.60 1.79 ? j1.51 1090 2.10 ? j1.61 2.05 ? j1.76 1150 2.26 ? j1.82 2.21 ? j2.21 zsource zload
microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. MDS500L
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